Selective formation of nanoholes with (100)-face walls by photoetching of n-TiO2 (rutile) electrodes, accompanied by increases in water-oxidation photocurrent

被引:77
作者
Tsujiko, A
Kisumi, T
Magari, Y
Murakoshi, K
Nakato, Y [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Dept Chem, Toyonaka, Osaka 5608531, Japan
[2] Osaka Univ, Res Ctr Photoenerget Organ Mat, Toyonaka, Osaka 5608531, Japan
来源
JOURNAL OF PHYSICAL CHEMISTRY B | 2000年 / 104卷 / 20期
关键词
D O I
10.1021/jp993285e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanometer-sized rectangular holes or grooves in the (001) direction were formed when single-crystal rutile-type n-TiO2 (001), (110), and (100) electrodes were illuminated in 0.05 M H2SO4 under anodic bias, accompanied by increases in water-oxidation photocurrents. Interestingly, only the (100) face was selectively exposed at the walls of the photoproduced holes and grooves, irrespective of crystal faces of electrode surfaces, though the (110) face for rutile TiO2 is known to be the thermodynamically most stable, that is, to have the lowest surface Gibbs energy. On the other hand, no (100) face was exposed at the walls of rectangular holes produced by chemical etching with hot H2SO4 and hydrogen reduction at elevated temperatures, indicating that the selective exposition of the (100) face is characteristic of photoetching in H2SO4 A possible explanation is given by assuming that the selective exposition of the (100) face is due to a kinetics-controlled mechanism. It is tentatively suggested that the photoetching, which makes the surface structure changeable, may be much slower than the water photooxidation at the (100) surface, though not so much slower at other surfaces such as (110) and (001).
引用
收藏
页码:4873 / 4879
页数:7
相关论文
共 31 条
[1]   ETCHING OF SILICON IN NAOH SOLUTIONS .1. INSITU SCANNING TUNNELING MICROSCOPIC INVESTIGATION OF N-SI(111) [J].
ALLONGUE, P ;
COSTAKIELING, V ;
GERISCHER, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (04) :1009-1018
[2]  
AUGUSTYNSKI J, 1988, STRUCT BOND, V69, P1
[3]   ELECTROCHEMICAL PHOTOLYSIS OF WATER AT A SEMICONDUCTOR ELECTRODE [J].
FUJISHIMA, A ;
HONDA, K .
NATURE, 1972, 238 (5358) :37-+
[4]   THE INFLUENCE OF OXYGEN VACANCIES ON THE KINETICS OF WATER PHOTOELECTROLYSIS AT (001) N-TIO2 RUTILE [J].
GONZALEZ, MLG ;
SALVADOR, P .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1992, 325 (1-2) :369-376
[5]   AGING EFFECTS IN SINGLE-CRYSTAL REDUCED RUTILE ANODES [J].
HARRIS, LA ;
WILSON, RH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1010-1015
[6]  
Hotsenpiller PAM, 1998, J PHYS CHEM B, V102, P3216
[7]   CHEMICAL ETCHING OF VICINAL SI(111) - DEPENDENCE OF THE SURFACE-STRUCTURE AND THE HYDROGEN TERMINATION ON THE PH OF THE ETCHING SOLUTIONS [J].
JAKOB, P ;
CHABAL, YJ .
JOURNAL OF CHEMICAL PHYSICS, 1991, 95 (04) :2897-2909
[8]   PICOSECOND DYNAMICS OF SURFACE ELECTRON-TRANSFER PROCESSES - SURFACE RESTRICTED TRANSIENT GRATING STUDIES OF THE N-TIO2/H2O INTERFACE [J].
KASINSKI, JJ ;
GOMEZJAHN, LA ;
FARAN, KJ ;
GRACEWSKI, SM ;
MILLER, RJD .
JOURNAL OF CHEMICAL PHYSICS, 1989, 90 (02) :1253-1269
[9]   THEORETICAL ELECTRONIC-PROPERTIES OF TIO2 (RUTILE) (001) AND (110) SURFACES [J].
KASOWSKI, RV ;
TAIT, RH .
PHYSICAL REVIEW B, 1979, 20 (12) :5168-5177
[10]   AGING OF SINGLE-CRYSTAL TIO2 RUTILE ELECTRODES [J].
KIWIET, NJ ;
FOX, MA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) :561-568