Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs

被引：8

作者：

Chang, TS

Chang, TC

Liu, PT

Chang, TS

Yeh, FS

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan

[6] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 300, Taiwan

[7] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

THIN SOLID FILMS | 2006年 / 498卷 / 1-2期

关键词：

TFT; low-k; passivation;

D O I：

10.1016/j.tsf.2005.07.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k similar to 7), the HSQ passivation layer (k similar to 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs). (c) 2005 Published by Elsevier B.V.

引用

页码：70 / 74

页数：5

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