Structure and dynamics of a single 2 pi VBL in a magnetic domain wall

被引:3
作者
Redjdal, M
Gross, PW
Humphrey, FB
机构
[1] Boston Univ., ECE Dept., Boston, MA 02215
关键词
D O I
10.1109/20.619642
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamics of a single three dimensional 2 pi-vertical Bloch line (2 pi VBL) structure in a domain wall in garnet have been investigated using large scale numerical simulations, The domain wall distorts when a 2 pi-VBL is present at equilibrium, For a film thickness of 1.28 mu m, a maximum wall tilt of 400 Angstrom ((-)2 degrees) was found at the 2 pi VBL. The 2 pi VBL longitudinal wall microdeformation is 1.22 mu m, or almost twice the 2 pi VBL width, When fields normal to the film surface are applied, wall and 2nVBL velocities, along with VBL to wall velocity ratio, are calculated, At fields lower than 10 Oe, the velocity ratio at dynamic equilibrium is equal to 7.5. It is half the theoretical ratio pi root Q/2 alpha. (Quality factor Q=4.0, damping constant alpha=0.2) for a periodic chain of pi VBLs. At fields between 10 to 12 Oe, saturation velocities of 10 m/s and 80 m/s are calculated for the wall and 2 pi VBL respectively. At higher fields, horizontal Bloch lines (HBLs) are nucleated on each side of the 2 pi VBL structure, Both the wall and 2 pi VBL velocities decrease along with the velocity ratio.
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页码:3999 / 4001
页数:3
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