An improved ZCS-PWM commutation cell for IGBT's application

被引：24

作者：

Fuentes, RC ^{[1
]}

Hey, HL ^{[1
]}

机构：

[1] Fed Univ Santa Maria, BR-97105900 Santa Maria, RS, Brazil

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 1999年 / 14卷 / 05期

关键词：

high-performance dc-dc power conversion; IGBTs; zero-current switching (ZCS);

D O I：

10.1109/63.788499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved zero-current-switching pulsewidth-modulation (ZCS-PWM) commutation cell is proposed, which is suitable for high-power applications using insulated gate bipolar transistors (IGBT's) as the power switches. It provides ZCS operation for active switches with low-current stress without voltage stress and PWM operating at constant frequency. The main advantage of this cell is a substantial reduction of the resonant current peak through the main switch during the commutation process. Therefore,the rms current through it is very close to that observed in the hard-switching PWM converters. Also, small-ratings auxiliary components can be used.

引用

页码：939 / 948

页数：10

共 10 条

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