Lasing in rare-earth-doped semiconductors: Hopes and facts

被引：22

作者：

Gregorkiewicz, T

Langer, JM

机构：

来源：

MRS BULLETIN | 1999年 / 24卷 / 09期

关键词：

D O I：

10.1557/S0883769400053033

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：27 / 31

页数：5

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