Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond

被引:17
作者
Park, M
Sowers, AT
Rinne, CL
Schlesser, R
Bergman, L
Nemanich, RJ
Sitar, Z
Hren, JJ
Cuomo, JJ
Zhirnov, VV
Choi, WB
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[3] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia
[4] Samsung Adv Inst Technol, Suwon 440600, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 02期
关键词
D O I
10.1116/1.590630
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two different types of the nitrogen-doped chemical vapor deposited (CVD) diamond films were synthesized with N-2 (nitrogen) and C3H6N6 (melamine) as doping sources. The samples were analyzed by scanning electron microscopy, Raman scattering, photoluminescence spectroscopy, and field-emission measurements. More effective substitutional nitrogen doping was achieved with C3H6N6 than With N-2 The diamond film doped with N-2 contained-a significant amount of nondiamond carbon phases. The sample produced with N-2 exhibited a lower field emission turn-on field than the sample produced with C3H6N6 It is believed that the presence of the graphitic phases (Or amorphous sp(2) carbon) at the grain boundaries of the diamond and/or the nanocrystallinity (or microcrystallinity) of the diamond play a significant role in lowering the turn-on field of the film produced using N-2. It is:Speculated that substitutional nitrogen, doping Plays only;a minor role in changing the field emission characteristics of CVD diamond films. (C) 1999 American Vacuum society. [S0734-211X(99)05902-8].
引用
收藏
页码:734 / 739
页数:6
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