Brillouin scattering study of gallium nitride: Elastic stiffness constants

被引：112

作者：

Yamaguchi, M

Yagi, T

Azuhata, T

Sota, T

Suzuki, K

Chichibu, S

Nakamura, S

机构：

[1] HOKKAIDO UNIV,RES INST ELECT SCI,SAPPORO,HOKKAIDO 060,JAPAN

[2] WASEDA UNIV,DEPT ELECT ELECT & COMP ENGN,SHINJUKU KU,TOKYO 169,JAPAN

[3] SCI UNIV TOKYO,FAC SCI & TECHNOL,CHIBA 278,JAPAN

[4] NICHIA CHEM IND LTD,DEPT RES & DEV,TOKUSHIMA 774,JAPAN

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 01期

关键词：

D O I：

10.1088/0953-8984/9/1/025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined. A comparison is given with the results of a recently reported model for calculation of the elastic constants of III-V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.

引用

页码：241 / 248

页数：8

共 21 条

[1]

AMANO H, 1994, APPL PHYS LETT, V64, P1337

[2] POLARIZED RAMAN-SPECTRA IN GAN [J].