Secondary electron emission studies

被引:152
作者
Shih, A
Yater, J
Hor, C
Abrams, R
机构
[1] Naval Research Laboratory, Washington
关键词
D O I
10.1016/S0169-4332(96)00729-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Secondary-electron-emission processes under electron bombardment play an important role in the performance of a variety of electron devices. While in some devices, the anode and the grid require materials that suppress the secondary-electron-generation process, the crossed-field amplifier (CFA) is an example where the cathode requires an efficient secondary-electron-emission material. Secondary-electron-emission processes will be discussed by a three-step process. penetration of the primary electrons, transmission of the secondary electrons through the material, and final escape of the secondary electrons over the vacuum barrier. The transmission of the secondary electrons is one of the critical factors in determining the magnitude of the secondary-electron yield. The wide band-gap in an insulator prevents low-energy secondary electrons from losing energy through electron-electron collisions, thereby resulting in a large escape depth for the secondary electrons and a large secondary-electron yield. In general, insulating materials have high secondary-electron yields, but a provision to supply some level of electrical conductivity is necessary in order to replenish the electrons lost in the secondary-electron-emission process. Our secondary-emission study of diamond demonstrates that the vacuum barrier height can have a strong effect on the total yield. The combined effect of a large escape depth of the secondary electrons and a low vacuum-barrier height is responsible for the extraordinarily high secondary-electron yields observed on hydrogen-terminated diamond samples.
引用
收藏
页码:251 / 258
页数:8
相关论文
共 22 条
[1]   THE SURFACE-POTENTIAL BARRIER IN SECONDARY-EMISSION FROM SEMICONDUCTORS [J].
BOUCHARD, C ;
CARETTE, JD .
SURFACE SCIENCE, 1980, 100 (01) :251-268
[2]  
Chernin D, 1995, P 1 INT WORKSH CROSS
[3]  
DEKKER AJ, 1958, ADV RES APPL, P251
[4]   IMPROVED AGE-DIFFUSION MODEL FOR LOW-ENERGY ELECTRON-TRANSPORT IN SOLIDS .1. THEORY [J].
DEVOOGHT, J ;
DUBUS, A ;
DEHAES, JC .
PHYSICAL REVIEW B, 1987, 36 (10) :5093-5109
[5]   IMPROVED AGE-DIFFUSION MODEL FOR LOW-ENERGY ELECTRON-TRANSPORT IN SOLIDS .2. APPLICATION TO SECONDARY-EMISSION FROM ALUMINUM [J].
DUBUS, A ;
DEVOOGHT, J ;
DEHAES, JC .
PHYSICAL REVIEW B, 1987, 36 (10) :5110-5119
[6]  
HACHENBERG O, 1959, ADV ELECT ELECT PHYS, P413
[7]   QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].
HIMPSEL, FJ ;
KNAPP, JA ;
VANVECHTEN, JA ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1979, 20 (02) :624-627
[8]  
Jenkins R. O., 1965, ELECT ION EMISSION, P54
[9]  
Levin G. Ya., 1992, Soviet Journal of Communications Technology & Electronics, V37, P128
[10]  
Malta DP, 1996, MATER RES SOC SYMP P, V416, P311