Thermoelectric properties of tin clathrates under hydrostatic pressure

被引：20

作者：

Chen, F ^{[1
]}

Stokes, KL

Nolas, GS

机构：

[1] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA

[2] Univ S Florida, Dept Phys, Tampa, FL 33620 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2002年 / 63卷 / 05期

关键词：

high pressure; electronic structure; defects;

D O I：

10.1016/S0022-3697(01)00236-0

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the temperature dependence of electrical resistance (R) and thermopower (S) of clathrate Cs8Sn44 under high pressure up to 1.2 GPa. We observe a reversible gap widening, prominent relaxation effect of R, irreversible increase of \S\ under high pressure. We also find that the power factor S(2)sigma (sigma: electrical conductivity) reaches a maximum at pressure of 0.3 GPa. Comparison of the experimental results with band structure calculations suggests that the intrinsic vacancy in the clathrate structure Of Cs8Sn44 plays an important role in transport properties under high pressure. Measurements on Cs8Zn4Sn42, a clathrate which has defects other than vacancies, are compared with Cs8Sn44. The results indicate that replacing Sn by Zn has similar effect as the intrinsic vacancy on S. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：827 / 832

页数：6

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