Temperature-insensitive UV-induced Bragg gratings in silica-based planar lightwave circuits on Si

被引：13

作者：

Hibino, Y ^{[1
]}

Abe, M

Tanaka, T

Himeno, A

Albert, J

Johnson, DC

Hill, KO

机构：

[1] NTT, Photon Labs, Tokai, Ibaraki 3191193, Japan

[2] Commun Res Ctr, Ottawa, ON K2H 8SA, Canada

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 21期

关键词：

D O I：

10.1049/el:19991269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technique is proposed to realise temperature-insensitive Bragg gratings in silica-based lightwave circuits on Si using a bimetal plate. A wavelength shift < 0.15nm is successfully demonstrated between -40 and 80 degrees C in the Bragg gratings written in a Mach-Zehnder interferometer.

引用

收藏

页码：1844 / 1845

页数：2

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