Direct writing and lift-off patterning of copper lines at 200 degrees C maximum process temperature

We adapted a new technique for depositing copper lines, at a maximum process temperature of 200 degrees C. The technique is based on the decomposition of copper hexanoate by UV light, followed by annealing in H-2 [1]. A copper film resistivity of 8 mu Omega cm is obtained. We patterned this copper metallization on Coming 7059 glass substrates by three different techniques, including exposure through a shadow mask, lift-off of xerographic toner, and direct writing.