The niobium doping effects on resistance degradation of strontium titanate thin film capacitors

被引：6

作者：

Lee, JH ^{[1
]}

Mohammedali, R ^{[1
]}

Han, JH ^{[1
]}

Balu, V ^{[1
]}

Gopalan, S ^{[1
]}

Wong, CH ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The rate of resistance degradation of thin (< 450 Angstrom) niobium-doped strontium titanate polycrystalline films with platinum top electrodes and iridium bottom electrodes was investigated as a function of direct current (dc) voltages, temperature, Nb atomic fractions [Sr(Ti1-xNbx)O3+y, x=0, 0.001, 0.01, and 0.05, respectively], and capacitor areas (from 2.50x10(-5) to 2.91x10(-3) cm(2)). It was found that by increasing the amount of niobium, the resistance degradation rates were greatly reduced, but the leakage currents increased. Also, the degradation rates seemed fairly independent of the areas of the devices. (C) 1999 American Institute of Physics. [S0003-6951(99)04836-6].

引用

页码：1455 / 1457

页数：3

共 12 条

[1] DC ELECTRICAL DEGRADATION OF PEROVSKITE-TYPE TITANATES .3. A MODEL OF THE MECHANISM [J].