Hysteresis compensation of a porous silicon relative humidity sensor using ANN technique

被引:29
作者
Islam, T [1 ]
Saha, H [1 ]
机构
[1] Jadavpur Univ, IC Design & Fabricat Ctr, Dept ETCE, Kolkata 700032, W Bengal, India
关键词
humidity sensing; porous silicon humidity sensor; hysteresis effect; compensation of hysteresis effect using ANN; hardware implementation of ANN model;
D O I
10.1016/j.snb.2005.05.022
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper presents a simple technique based on well-known multilayer perceptron (MLP) neural network with back propagation training algorithm for compensating the significant error due to hysteresis in a porous silicon relative humidity sensor. The porous silicon humidity sensor has been fabricated, and its hysteresis with increasing and decreasing relative humidity has been determined experimentally by a novel phase detection circuit. Simulation studies show that the artificial neural network (ANN) technique can be effectively used to compensate the hysteresis of the porous silicon sensor for relative humidity (%RH) measurement. A hardware implementation scheme of the hysteresis compensating ANN model using a micro-controller is also proposed. Simulation studies show that the maximum error is within +/- 1% of its full-scale value. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:334 / 343
页数:10
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