Study of high-power diode-end-pumped Nd:YVO4 laser at 1.34 μm:: influence of Auger upconversion

被引：61

作者：

Chen, YF ^{[1
]}

Lee, LJ ^{[1
]}

Huang, TM ^{[1
]}

Wan, CL ^{[1
]}

机构：

[1] Natl Sci Council, Precis Instrument Dev Ctr, Hsinchu, Taiwan

来源：

OPTICS COMMUNICATIONS | 1999年 / 163卷 / 4-6期

关键词：

neodymium; diode-pumped; solid-state laser; Auger upconversion;

D O I：

10.1016/S0030-4018(99)00132-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrated an experimental study of the influence of the Nd3+ concentration on scaling diode-pumped Nd:YVO4 1.34-mu m lasers to higher power. An output power of 5.1 W at 1.34 mu m was obtained with a 0.5-at.% ed-doped YVO4 at 13.5 W of incident pump power. The strong dependence of the slope efficiency on the dopant concentration is attributed to an Auger upconversion process. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：198 / 202

页数：5

共 16 条

[1] SINGLE-MODE 1.34-MU-M ND-YVO(4) MICROCHIP LASER WITH CW TI-SAPPHIRE AND DIODE-LASER PUMPING [J].

BOWKETT, GC ;

BAXTER, GW ;

BOOTH, DJ ;

TAIRA, T ;

TERANISHI, H ;

KOBAYASHI, T .

OPTICS LETTERS, 1994, 19 (13) :957-959

[2] Design criteria for concentration optimization in scaling diode end-pumped lasers to sigh powers: Influence of thermal fracture [J].

Chen, YF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (02) :234-239

[3] Energy transfer up-conversion and excited state absorption of laser radiation in Nd:YLF laser crystals [J].

Chuang, T ;

Verdun, HR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (01) :79-91

[4] Microchip Nd:vanadate lasers at 1342 and 671 nm [J].

Conroy, RS ;

Kemp, AJ ;

Friel, GJ ;

Sinclair, BD .

OPTICS LETTERS, 1997, 22 (23) :1781-1783

[5] HIGHLY EFFICIENT ND-YVO4 DIODE-LASER END-PUMPED LASER [J].

FIELDS, RA ;

BIRNBAUM, M ;

FINCHER, CL .

APPLIED PHYSICS LETTERS, 1987, 51 (23) :1885-1886

[6] Diode-pumped passively mode-locked 1.3-mu m Nd:YVO4 and Nd:YLF lasers by use of semiconductor saturable absorbers [J].

Fluck, R ;

Zhang, G ;

Keller, U ;

Weingarten, KJ ;

Moser, M .

OPTICS LETTERS, 1996, 21 (17) :1378-1380

[7] Passively Q-switched 1.34-mu m Nd:YVO4 microchip laser with semiconductor saturable-absorber mirrors [J].

Fluck, R ;

Braun, B ;

Gini, E ;

Melchior, H ;

Keller, U .

OPTICS LETTERS, 1997, 22 (13) :991-993

[8] High-inversion densities in Nd:YAG:: Upconversion and bleaching [J].

Guy, S ;

Bonner, CL ;

Shepherd, DP ;

Hanna, DC ;

Tropper, AC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (05) :900-909

[9] EXCITED-STATE-ABSORPTION AND UP-CONVERSION STUDIES OF ND3+-DOPED-SINGLE CRYSTALS Y3AL5O12, YLIF4, AND LAMGAL11O19 [J].

GUYOT, Y ;

MANAA, H ;

RIVOIRE, JY ;

MONCORGE, R ;

GARNIER, N ;

DESCROIX, E ;

BON, M ;

LAPORTE, P .

PHYSICAL REVIEW B, 1995, 51 (02) :784-799

[10] EXCITED-STATE ABSORPTION IN THE INFRARED-EMISSION DOMAIN OF ND3+-DOPED Y3AL5O12, YLIF4, AND LAMGAL11O19 [J].

GUYOT, Y ;

MONCORGE, R .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8526-8530

← 1 2 →