Organic electrically bistable materials for non-volatile memory applications

被引：8

作者：

Pirovano, A

Sotgiu, R

Conoci, S

Petralia, S

Buonocore, F

机构：

[1] STMicroelectronics, Adv R&D, NVMTD, FTM, I-20041 Agrate Brianza, MI, Italy

[2] STMicroelectronics, Loc R&D, MFD, CPG, Catania, Italy

[3] STMicroelectronics, Post Silicon Technol, FTM, Catania, Italy

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 11期

关键词：

emerging non-volatile memories; organic compounds; conductance switching memories;

D O I：

10.1016/j.sse.2005.10.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Organic electrically bistable materials exhibiting conductance switching have been investigated and their potential exploitation in non-volatile memory applications has been tested. Theoretical modelling of both geometrical and electronic structure of such materials has been carried out and tentatively correlated to the mechanisms responsible of the bistable switching property. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1820 / 1825

页数：6

共 4 条

[1]

[Anonymous], INT EL DEV M

[2] Large conductance switching and memory effects in organic molecules for data-storage applications [J].