Ultraviolet luminescence and electro-luminescence of polydihexylsilane

被引：12

作者：

Ebihara, K

Matsushita, S

Koshihara, S

Minami, F

Miyazawa, T

Obata, K

Kira, M

机构：

[1] RIKEN,INST PHYS & CHEM RES,PHOTODYNAM RES CTR,SENDAI,MIYAGI 980,JAPAN

[2] TOHOKU UNIV,GRAD SCH SCI,DEPT CHEM,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷

关键词：

polysilane; UV light emission; polymer LED;

D O I：

10.1016/S0022-2313(96)00214-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the ultraviolet (UV) electro-luminescence (EL) of highly purified polysilanes at low temperatures (below 210 K) for the first time. We observed st sharp EL band in highly purified polydihexylsilane (PDHS) thin film at 3.35 eV (370 nm) which is attributed to the radiative decay of the B-1(u) exciton state. The decrease of the EL quantum yield at high temperature is attributed to the thermally activated fluctuation of the Si backbone configuration. We also report the phosphorescence spectrum of the PDHS thin film observed at 4.2 K.

引用

页码：43 / 45

页数：3