Effects on electronic structures of atomic configurations in ternary compounds Ni-M-Z (M=Sc, Ti, Zr, Hf; Z=Sn, Sb)

被引:20
作者
Ishida, S [1 ]
Masaki, T [1 ]
Fujii, S [1 ]
Asano, S [1 ]
机构
[1] UNIV TOKYO,COLL ARTS & SCI,INST PHYS,MEGURO KU,TOKYO 153,JAPAN
来源
PHYSICA B | 1997年 / 237卷
关键词
semiconductor; electronic structure; atomic configuration;
D O I
10.1016/S0921-4526(97)00232-9
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
It will be shown from electronic structures of ternary compounds Ni-M-Z that some of them are able to be a conductor or two types of semiconductors in the different atomic configurations and that the energy gaps determined by experiments come from the configuration where Ni and M atoms are separated.
引用
收藏
页码:363 / 364
页数:2
相关论文
共 6 条
[1]   GAP AT FERMI LEVEL IN SOME NEW D-ELECTRON AND F-ELECTRON INTERMETALLIC COMPOUNDS [J].
ALIEV, FG .
PHYSICA B, 1991, 171 (1-4) :199-205
[2]  
ANDERSEN OK, 1985, P INT SCH PHYS, V89, P59
[3]  
ENDO K, COMMUNICATION
[4]   GROUND-STATE THERMOMECHANICAL PROPERTIES OF SOME CUBIC ELEMENTS IN LOCAL-DENSITY FORMALISM [J].
JANAK, JF ;
MORUZZI, VL ;
WILLIAMS, AR .
PHYSICAL REVIEW B, 1975, 12 (04) :1257-1261
[5]  
NOBATA T, 1995, M PHYS SOC JAP 199 3, P100
[6]  
Waki S., 1995, M PHYS SOC JAP SEC 3, P24