Micro crystalline silicon nucleation sites in the sub-surface of hydrogenated amorphous silicon

被引：53

作者：

Fujiwara, H ^{[1
]}

Kondo, M ^{[1
]}

Matsuda, A ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058568, Japan

来源：

SURFACE SCIENCE | 2002年 / 497卷 / 1-3期

关键词：

infrared absorption spectroscopy; ellipsometry; plasma processing; nucleation; silicon; hydrogen atom; amorphous surfaces;

D O I：

10.1016/S0039-6028(01)01665-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have characterized surface structures of hydrogenated amorphous silicon (a-Si:H) by applying infrared attenuated total reflection spectroscopy, in order to investigate the phase transition from a-Si:H to microcrystalline silicon ( muc-Si:H). At the onset of muc-Si:H nucleation from the a-Si:H phase, an infrared absorption peak at 1937 +/- 5 cm(-1) assigned to the SiHn, (n = 1-2) complex is detected in a 5-A thick region of the a-Si:H sub-surface. The SiHn complex concentration within the a-Si:H sub-surface region showed a clear relationship with the pc-Si:H nucleation. We propose that the SiHn complex, formed by insertion of H into a strained Si-Si bond, contributes to the reactions that result in muc-Si:H nucleus formation. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：333 / 340

页数：8

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