Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure

被引：67

作者：

Itskevich, IE

Henini, M

Carmona, HA

Eaves, L

Main, PC

Maude, DK

Portal, JC

机构：

[1] CNRS,LCMI,F-38042 GRENOBLE,FRANCE

[2] CNRS,INSA,F-31077 TOULOUSE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 04期

关键词：

D O I：

10.1063/1.118194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the photoluminescence spectrum of self-assembled InAs quantum dots embedded in a GaAs matrix in magnetic field B up to 23 T and under hydrostatic pressure up to 8 kbar. A strong anisotropy in the diamagnetic shift is found depending on whether B is applied parallel or perpendicular to the growth direction. In the former case, the spatial extent of the carrier wave function in the dot is estimated to be 60 Angstrom. The pressure coefficient for the dot emission line is (9.1 +/- 0.2) meV/kbar, about 20% smaller than for the Gamma-point band gap in bulk GaAs. (C) 1997 American Institute of Physics.

引用

页码：505 / 507

页数：3

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