0.3 μm contact layer:: process characterisation

被引：1

作者：

Romeo, C

Canali, F

Riva, L

机构：

[1] STMicroelectronics Srl., 20041 Agrate Brianza, Via Olivetti

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00022-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe the use of DUV lithography to define 0.3 mu m contact holes onto an interlevel dielectric layer of BPSG which is a strong resist contaminant. Two solutions are proposed and compared in terms of the lithographic process window, critical dimension (CD) control, etch process, resist removal and electrical results on production wafers. As result the use of Brewer Science BARC has been found as an effective solution to improve the process window and to eliminate process integration problems.

引用

页码：89 / 92

页数：4