Electronic states of monolayer hexagonal boron nitride formed on the metal surfaces

被引：74

作者：

Nagashima, A ^{[1
]}

Tejima, N ^{[1
]}

Gamou, Y ^{[1
]}

Kawai, T ^{[1
]}

Oshima, C ^{[1
]}

机构：

[1] WASEDA UNIV, DEPT APPL PHYS, SHINJUKU KU, TOKYO 169, JAPAN

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

boron nitride; electron energy loss spectroscopy; ultraviolet photoelectron spectroscopy; X-ray photoelectron spectroscopy;

D O I：

10.1016/0039-6028(96)00134-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By using angle-resolved ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy and electron energy loss spectroscopy (EELS), we have investigated the electronic properties of monolayer films of hexagonal boron nitride (h-BN) formed on Ni(111), Pd(111) and Pt(111). Because of the weakness of the interfacial bonding, the electronic structure of monolayer BN is almost independent of the substrate and the energy bands and core-levels in the BN film are aligned to the vacuum level, not to the Fermi level. In accordance with these results, the EELS spectra observed for the BN-metal systems change from one substrate to the other depending on the work function.

引用

页码：307 / 311

页数：5

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