Printed polymer transistors

被引:18
作者
Knobloch, A [1 ]
Bernds, A [1 ]
Clemens, W [1 ]
机构
[1] Siemens Corp Technol, Innovat Elect, D-91052 Erlangen, Germany
来源
POLYTRONIC 2001, PROCEEDINGS | 2001年
关键词
D O I
10.1109/POLYTR.2001.973262
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Integrated plastic circuits (IPCs) based on organic field-effect transistors (OFETs) have many advantages. One potential is the use for commercial applications such as low cost ident-tags or electronic barcodes. In order to achieve low production cost, the transistors must be prepared by printing processes. In this paper we present OFETs and organic inverters based on functional polymers with single layers applied by pad and screen printing, The pad printing technique is an efficient method for patterning the electrodes of an OFET. With this technique, dimensions of 20 mum were reached. Source-drain and gate electrodes consisting of either polyaniline, carbon black conductive ink, gold, or silver filled ink were printed. With these structures OFETs were assembled, in which poly(3-alkylthiophene) served as the semiconductor, and poly(4-hydroxystyrene) as the insulator. These polymers were deposited homogeneously by screen printing or spin coating. In addition, a gate dielectric for an OFET was also pad printed. A full organic inverter with all elcctrodes printed is introduced. As the production speed of the presented printing techniques has the ability to be scaled up, the potential for high volume printing of organic electronics is proven.
引用
收藏
页码:84 / 90
页数:7
相关论文
共 13 条
[1]   Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].
Bao, Z ;
Dodabalapur, A ;
Lovinger, AJ .
APPLIED PHYSICS LETTERS, 1996, 69 (26) :4108-4110
[2]  
Bao Z., 1997, POLYM MAT, V77, P409
[3]  
FICKER J, 2001, P SPIE INT SOC OPT E, P4466
[4]   High-performance all-polymer integrated circuits [J].
Gelinck, GH ;
Geuns, TCT ;
de Leeuw, DM .
APPLIED PHYSICS LETTERS, 2000, 77 (10) :1487-1489
[5]  
Granlund T, 2000, ADV MATER, V12, P269, DOI 10.1002/(SICI)1521-4095(200002)12:4<269::AID-ADMA269>3.0.CO
[6]  
2-5
[7]  
Rogers JA, 1999, ADV MATER, V11, P741, DOI 10.1002/(SICI)1521-4095(199906)11:9<741::AID-ADMA741>3.0.CO
[8]  
2-L
[9]   RETRACTED: Ambipolar pentacene field-effect transistors and inverters (Retracted article. See vol 298, pg 961, 2002) [J].
Schön, JH ;
Berg, S ;
Kloc, C ;
Batlogg, B .
SCIENCE, 2000, 287 (5455) :1022-1023
[10]   Integrated, high-mobility polymer field-effect transistors driving polymer light-emitting diodes [J].
Sirringhaus, H ;
Tessler, N ;
Friend, RH .
SYNTHETIC METALS, 1999, 102 (1-3) :857-860