New results on MRS APDs

被引：61

作者：

Akindinov, AV

Martemianov, AN

Polozov, PA

Golovin, VM

Grigoriev, EA

机构：

[1] CPTA,MOSCOW,RUSSIA

[2] MAX PLANCK INST KERNPHYS,D-69029 HEIDELBERG,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 387卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(96)01201-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Characterisation of recently developed at CPTA for high-energy and medical physics applications MRS (Metal-Resistive layer-Semiconductor) APDs was done at ITEP. Special emphasis in the new design was made on improvement of time characteristics and photosensitivity in green wavelength. Response of detectors to beta-, gamma-sources and LEDs has been studied. Gain (up to 10(5)) has been measured as a function of temperature and voltage. Good separation of 1-, 2-, etc. photoelectron peaks was observed in spectra at room temperature. No ageing of the detectors throughout several months operation under continuous strong illumination has been observed. Possible applications of detectors are discussed.

引用

页码：231 / 234

页数：4

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