Effects of initial surface states on formation processes of epitaxial CoSi2(100) on Si(100)

被引：4

作者：

Hayashi, Y

Matsuoka, Y

Ikeda, H

Zaima, S

Yasuda, Y

机构：

[1] Nagoya Univ, Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Ctr Cooperat Res Adv Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Municipal Ind Res Inst, Dept Elect, Atsuta Ku, Nagoya, Aichi 4560058, Japan

来源：

THIN SOLID FILMS | 1999年 / 343卷

关键词：

surface states; epitaxial CoSi2(100); scanning tunneling microscopy;

D O I：

10.1016/S0040-6090(98)01710-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Influences of initial surface states on formation processes of epitaxial CoSi2(100) films on Si(100) surfaces have been investigated by scanning tunneling microscopy. Epitaxial CoSi2(100) films were formed on various initial Si surfaces by solid-phase epitaxy of 3-ML-thick Co films. The CoSi2(100) films formed on amorphous, defect-induced and Si-island-formed Si surfaces show the increase in the areal ratio and the reduction of the height of the film. These facts suggest that surface defects and steps act as nucleation sites of CoSi2(100) and enhance the multiple nucleation and layer growth. As a result, the agglomeration of CoSi2 films would be suppressed and the quality of CoSi2(100) films is improved. In addition, it is clearly found that an almost pinhole-free and atomically-flat silicide film can be realized on the oxygen-adsorbed surface. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：562 / 566

页数：5

共 6 条

[1] DETERMINATION OF THE LOCAL ELECTRONIC-STRUCTURE OF ATOMIC-SIZED DEFECTS ON SI(001) BY TUNNELING SPECTROSCOPY [J].