Investigation of different oxidation processes for porous silicon studied by spectroscopic ellipsometry

被引：22

作者：

Frotscher, U ^{[1
]}

Rossow, U ^{[1
]}

Ebert, M ^{[1
]}

Pietryga, C ^{[1
]}

Richter, W ^{[1
]}

Berger, MG ^{[1
]}

ArensFischer, R ^{[1
]}

Munder, H ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

来源：

THIN SOLID FILMS | 1996年 / 276卷 / 1-2期

关键词：

oxidation; silicon; ellipsometry; multilayers;

D O I：

10.1016/0040-6090(95)08044-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we investigate the oxidation of porous silicon by O-3, H2O2, and, for comparison, in normal air. Such an oxidation may serve as passivation for porous silicon in applications in order to prevent devices from degradation. The changes in the dielectric function caused by this oxidation was monitored by spectroscopic ellipsometry. Application of both H2O2 and O-3 resulted in a significant lowering of the values of the imaginary part of the dielectric function as expected when oxidizing the inner surfaces of these layers. For a multilayer structure we show that ozone treatment of this structure indeed passivates that sample against further oxidation in air as studied over an extended period of time (3 months).

引用

页码：36 / 39

页数：4

共 11 条

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