Optical and electrical properties of metal-diamond-like atomic-scale composite (DLASC) films and DLASC/Si heterostructures

被引：12

作者：

Polyakov, VI ^{[1
]}

Rukovishnikov, AI ^{[1
]}

Perov, PI ^{[1
]}

Khomich, AV ^{[1
]}

Sukhanov, AA ^{[1
]}

Dorfman, BF ^{[1
]}

Pypkin, BN ^{[1
]}

Abraizov, MG ^{[1
]}

Druz, B ^{[1
]}

机构：

[1] SUNY FARMINGDALE, FARMINGDALE, NY 11735 USA

来源：

THIN SOLID FILMS | 1997年 / 292卷 / 1-2期

关键词：

optical properties; electrical properties and measurements; diamond; metals; heterostructures;

D O I：

10.1016/S0040-6090(96)08936-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond-like atomic-scale composite (DLASC) films deposited on (100) Si were studied by means of charge deep-level transient spectroscopy (Q-DLTS) and ellipsometry. Two peaks in the continuous spectrum of trapping centers were discriminated by the Q-DLTS technique: from the centers localized on the film-Si interface and from the centers localized in the film. The dependence of their parameters an deposition conditions, thermal and radiation treatment was established. The Q-DLTS results correlate well with that obtained by positron annihilation spectroscopy.

引用

页码：91 / 95

页数：5

共 21 条

[1] DEEP-LEVEL TRANSIENT CHARGE SPECTROSCOPY OF SN DONORS IN ALXGA1-XAS [J].