Effect of low hydrostatic pressures on the solid state reactions in multilayers

被引：11

作者：

Daroczi, L

Beke, DL

Langer, G

Radnoczi, G

Czigany, Z

机构：

[1] DEBRECEN UNIV MED,DEPT SOLID STATE PHYS,H-4010 DEBRECEN,HUNGARY

[2] HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(95)00921-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In amorphous Si-Ge multilayers annealing at 858 K under 180 bar led to the depression of porosity formation. In crystalline Ni-Zr multilayers a small enhancement of the growth of amorphous phase was observed under 200 bar. In Co-Sn bilayers the kinetics of electrical resistivity at 298 K showed a characteristic cross-over as the pressure increased above 150 bar.

引用

页码：417 / 418

页数：2