Structure and ferromagnetism of Mn+ ion-implanted ZnO thin films on sapphire

被引:13
作者
Brauer, G
Anwand, W
Skorupa, W
Schmidt, H
Diaconu, M
Lorenz, M
Grundmann, M
机构
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
[2] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany
关键词
D O I
10.1016/j.spmi.2005.08.030
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Slow Positron Implantation Spectroscopy (SPIS), based on the generation, implantation and subsequent annihilation of mono-energetic positrons in a sample, has been used to stud), depth dependent vacancy-type damage in three ZnO films grown by pulsed laser deposition on c-plane sapphire. Doping was achieved by implantation of 250 keV Mn+ ions at 300 degrees C with three different fluences-10(16), 3 x 10(16), and 6 x 10(16) cm(-2). and Subsequent thermal annealing in air. Evolution of the open volume damage, its depth distribution, and the magnetic behavior was investigated by SPIS and Magnetic Force Microscopy. No indication of magnetic domain formation was found in any of the three films after implantation and the first annealing at 500 degrees C, whereas after the second annealing at 750 degrees C the two samples having the higher fluence showed stripe-like magnetic domains. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:41 / 49
页数:9
相关论文
共 19 条
[1]   A MAGNETICALLY GUIDED SLOW POSITRON BEAM FOR DEFECT STUDIES [J].
ANWAND, W ;
KISSENER, HR ;
BRAUER, G .
ACTA PHYSICA POLONICA A, 1995, 88 (01) :7-11
[2]   Slow positron implantation spectroscopy - a tool to characterize vacancy-type damage in ion-implanted 6H-SiC [J].
Brauer, G ;
Anwand, W ;
Coleman, PG ;
Skorupa, W .
VACUUM, 2005, 78 (2-4) :131-136
[3]  
Brunner S, 1999, MATER RES SOC SYMP P, V540, P207
[4]   Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy [J].
Brunner, S ;
Puff, W ;
Balogh, AG ;
Mascher, P .
POSITRON ANNIHILATION - ICPA-12, 2001, 363-3 :141-143
[5]  
Das Sarma S, 2001, AM SCI, V89, P516
[6]   UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD [J].
Diaconu, M ;
Schmidt, H ;
Hochmuth, H ;
Lorenz, M ;
Benndorf, G ;
Lenzner, J ;
Spemann, D ;
Setzer, A ;
Nielsen, KW ;
Esquinazi, P ;
Grundmann, M .
THIN SOLID FILMS, 2005, 486 (1-2) :117-121
[7]   Induced magnetic ordering by proton irradiation in graphite -: art. no. 227201 [J].
Esquinazi, P ;
Spemann, D ;
Höhne, R ;
Setzer, A ;
Han, KH ;
Butz, T .
PHYSICAL REVIEW LETTERS, 2003, 91 (22)
[8]   Effects of high-dose Mn implantation into ZnO grown on sapphire [J].
Heo, YW ;
Ivill, MP ;
Ip, K ;
Norton, DP ;
Pearton, SJ ;
Kelly, JG ;
Rairigh, R ;
Hebard, AF ;
Steiner, T .
APPLIED PHYSICS LETTERS, 2004, 84 (13) :2292-2294
[9]   High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition [J].
Kaidashev, EM ;
Lorenz, M ;
von Wenckstern, H ;
Rahm, A ;
Semmelhack, HC ;
Han, KH ;
Benndorf, G ;
Bundesmann, C ;
Hochmuth, H ;
Grundmann, M .
APPLIED PHYSICS LETTERS, 2003, 82 (22) :3901-3903
[10]   On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system [J].
Kundaliya, DC ;
Ogale, SB ;
Lofland, SE ;
Dhar, S ;
Metting, CJ ;
Shinde, SR ;
Ma, Z ;
Varughese, B ;
Ramanujachary, KV ;
Salamanca-Riba, L ;
Venkatesan, T .
NATURE MATERIALS, 2004, 3 (10) :709-714