In-plane orientation of C-axis oriented YBa2Cu3Ox films on MgO substrates

被引：22

作者：

Mukaida, M ^{[1
]}

Takano, Y ^{[1
]}

Chiba, K ^{[1
]}

Kusunoki, M ^{[1
]}

Ohshima, S ^{[1
]}

机构：

[1] Yamagata Univ, Fac Engn, Yamagata 9928510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4A期

关键词：

YBa2Cu3Ox films; MgO substrate; in-plane orientation; 45 degrees misaligned grain;

D O I：

10.1143/JJAP.38.1945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The appearance of 45 degrees grain boundaries in c-axis oriented YBa2Cu3Ox films grown by pulsed laser deposition on MgO (001) substrates is discussed. X-ray phi-scan (in-plane orientation) measurements have revealed that YBa2Cu3Ox films grown at around 700 degrees C have Two types of grains with [100](MgO) (-) parallel to [100](YBCO) and [110](MgO) parallel to [100](YBCO) in-plane epitaxial relationships. A plausible growth model is proposed from the viewpoints of lattice matching and ionic adhesive energy. The ratio of 0 degrees and 45 degrees grains is found to be a function of the substrate temperature. By decreasing the substrate temperature, we obtained c-axis oriented YBa2Cu3Ox thin films with only a [100](MgO) parallel to [100](YBCO) in-plane epitaxial relation. We have eliminated the 45 degrees grain boundaries which drastically increase the surface resistance of the YBa2Cu3Ox films for microwave applications.

引用

页码：1945 / 1948

页数：4

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