Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering

被引：111

作者：

Cornelius, S. ^{[1
]}

Vinnichenko, M. ^{[1
]}

Shevchenko, N. ^{[1
]}

Rogozin, A. ^{[1
]}

Kolitsch, A. ^{[1
]}

Moeller, W. ^{[1
]}

机构：

[1] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期

关键词：

aluminium; electrical resistivity; electron density; electron mobility; grain boundaries; Hall mobility; II-VI semiconductors; semiconductor thin films; sputtered coatings; wide band gap semiconductors; zinc compounds; ZINC-OXIDE; LASER DEPOSITION; CARRIER MOBILITY; TRANSPARENT; SILICON;

D O I：

10.1063/1.3074373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The study is focused on the improvement of the free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing films are obtained with a Hall mobility of 46 cm(2) V(-1) s(-1), a free electron density of 6.0x10(20) cm(-3), and an electrical resistivity of 2.26x10(-4) Omega cm. The relation between the mobility and free electron density for different growth conditions is discussed in terms of ionized impurity scattering, impurity clustering, and grain boundary limited transport.

引用

页数：3

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