The remote roughness mobility resulting from the ultrathin SiO2 thickness nonuniformity in the DG SOI and bulk MOS transistors

被引：11

作者：

Walczak, J ^{[1
]}

Majkusiak, B ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期

关键词：

electron mobility; remote roughness; double gate SOI transistor; ultrathin silicon oxide;

D O I：

10.1016/S0167-9317(01)00633-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the SiO2 thickness nonuniformity on the electron mobility in the n-channel Double Gate (DG) SOI and bulk MOS transistors is investigated based on self-consistent solution to Poisson and Schrodinger equations and within the relaxation time approximation. The mobility degradation induced by the SiO2 thickness nonuniformity is found to be of significant importance while scaling down the dielectric layer thickness and the semiconductor layer thickness in case of the SOI transistor. (C) 2001 Published by Elsevier Science B.V.

引用

页码：417 / 421

页数：5