Modified electron-beam-induced deposition of metal nanostructure arrays using a parallel electron beam

被引：11

作者：

Basu, Joysurya ^{[1
]}

Carter, C. Barry ^{[1
]}

Divakar, R. ^{[2
]}

Shenoy, Vijay B. ^{[3
]}

Ravishankar, N. ^{[4
]}

机构：

[1] Univ Connecticut, Dept Chem Mat & Biomol Engn, Storrs, CT 06269 USA

[2] Indira Gandhi Ctr Atom Res, Div Phys Met, Kalpakkam 603102, Tamil Nadu, India

[3] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[4] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

关键词：

D O I：

10.1063/1.2992193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A modified electron-beam-induced deposition method using a parallel beam of electrons is developed. The method relies on the buildup of surface potential on an insulating surface exposed to an electron beam. Presence of sharp edges on the insulating surface implies presence of large electric fields that lead to site-specific nucleation of metal vapor on those regions. Feature sizes as small as 20 nm can be deposited without the need to use fine probes, and thus the limitation of probe size imposed on the resolution is overcome. The use of pure metal vapor also renders the process inherently clean. (C) 2008 American Institute of Physics.

引用

页数：3

共 28 条

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