Growth of 5 mm GaN single crystals at 750°C from an Na-Ga melt

被引：32

作者：

Aoki, M

Yamane, H

Shimada, M

Sarayama, S

DiSalvo, FJ

机构：

[1] Tohoku Univ, Inst Adv Mat Proc, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Ricoh Co Ltd, Res & Dev Grp, Ctr Res & Dev, Dept 5, Natori, Miyagi 9811241, Japan

[3] Cornell Univ, Dept Chem, Ithaca, NY 14853 USA

来源：

CRYSTAL GROWTH & DESIGN | 2001年 / 1卷 / 02期

关键词：

D O I：

10.1021/cg005521c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A platelet GaN single crystal having an area of 5 x 3 mm(2) was obtained by heating a Na-Ga melt in a BN crucible at 750degreesC under 5 MPa of N-2 for 360 h. Prismatic single crystals with a size of more than 0.5 x 0.5 x 1.0 mm(3) grew at a lower content of Na in the starting melt.

引用

页码：119 / 122

页数：4

共 16 条

[1] Growth of GaN single crystals from a Na-Ga melt at 750°C and 5 MPa of N2 [J].