Advanced photo integrated circuits in CMOS technology

被引：15

作者：

Zimmermann, H ^{[1
]}

Ghazi, A ^{[1
]}

Heide, T ^{[1
]}

Popp, R ^{[1
]}

Buchner, R ^{[1
]}

机构：

[1] Univ Kiel, Lehrstuhl Halbleitertechn, D-24143 Kiel, Germany

来源：

49TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 1999 PROCEEDINGS | 1999年

关键词：

D O I：

10.1109/ECTC.1999.776313

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Results of new CMOS-integrated PIN photodiodes in optoelectronic integrated circuits (OEICs) for applications in optical storage systems, in optical data transmission and in optical interconnects are presented. The rise and fall times of the integrated PIN photodiodes are below 0.3 ns. The CMOS-integrated PIN photodiodes are sufficient for a NRZ data rate of 1.5 Gb/s and the results show that PIN CMOS receiver OEICs in submicron technologies enable data rates up to 1 Gb/s. These photodiodes combine this high speed with a high quantum efficiency of approximately 50 %. The further improvement of their quantum efficiency above 90 % by the integration of an antireflection coating is discussed. Low-offset PIN-CMOS-OEICs for the application in digital-versatile-disk systems with bandwidths in excess of 32 MHz are presented. A highspeed PIN-CMOS-OEIC in 1.0 mu m technology for optical data transmission exhibits a data rate of 622 Mb/s.

引用

页码：1030 / 1035

页数：6

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