Alkali incorporation control in Cu(In, Ga)Se2 thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency

被引：69

作者：

Ishizuka, Shogo ^{[1
]}

Yamada, Akimasa ^{[1
]}

Matsubara, Koji ^{[1
]}

Fons, Paul ^{[1
]}

Sakurai, Keiichiro ^{[1
]}

Niki, Shigeru ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2992061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Control of the alkali doping level in Cu(In, Ga)Se-2 (CIGS) films was demonstrated using alkali-silicate thin layers of various thickness deposited on substrates prior to the sputtering of the Mo back contact layer. Not only the alkali density in the CIGS film, but also the Ga composition distribution in CIGS films, CIGS grain size, and consequent photovoltaic performance showed variations with the silicate layer thickness. Using alkali-silicate thin layers as an alkali source material, 17.4% and 17.7% efficiency flexible CIGS solar cells have been demonstrated on Ti and zirconia substrates, respectively. (C) 2008 American Institute of Physics.

引用

页数：3

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