Sub 50 nm InPHEMT device with Fmax greater than 1 THz

被引：232

作者：

Lai, R. ^{[1
]}

Mei, X. B. ^{[1
]}

Deal, W. R. ^{[1
]}

Yoshida, W. ^{[1
]}

Kim, Y. M. ^{[1
]}

Liu, P. H. ^{[1
]}

Lee, J. ^{[1
]}

Uyeda, J. ^{[1
]}

Radisic, V. ^{[1
]}

Lange, M. ^{[1
]}

Gaier, T. ^{[2
]}

Samoska, L. ^{[2
]}

Fung, A. ^{[2
]}

机构：

[1] Northrop Grumman Space Technol, 1 Space Pk, Redondo Beach, CA 90278 USA

[2] Jet Prop Lab, Pasadena, CA 91109 USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we present the latest advancements of sub 50 nm InGaAs/InAlAs/InP High Electron Mobility Transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385 GHz. This extrapolation is validated by the demonstration of a 3-stage common source low noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at 340 GHz.

引用

页码：609 / +

页数：2