Boundary conditions of electrons at the interface Part II: Internal stresses in thin films

Examined in Part 11 of this work is the mechanism of internal stresses that arise inside thin films. The modified Thomas-Fermi-Dirac (TFD) model [Progr. Nature Sci. 3 (3) (1993) 211; Acta Phys. Sin. 2 (6) (1993) 439; Proceedings of the 1990 CMRS International Symposium, 1990, p. 783; Progr. Natural Science 6 (1) (1996) 12] is used for the computation. The continuity of electron density across the interface of thin films is responsible for the high rise of internal stresses. Extremely high amplitude stresses are found in thin film next to the interface where dislocations do not appear. Such a behavior occurs when the thin film thickness is below critical. These resulting analytical findings agree with the experimental observations. (C) 2001 Published by Elsevier Science Ltd.