Exciton formation in graphene bilayer

被引：48

作者：

Dillenschneider, Raoul ^{[1
]}

Han, Jung Hoon ^{[2
,3
]}

机构：

[1] Univ Augsburg, Dept Phys, D-86135 Augsburg, Germany

[2] Sungkyunkwan Univ, BK21 Phys Res Div, Dept Phys, Suwon 440746, South Korea

[3] Seoul Natl Univ, CSCMR, Seoul 151747, South Korea

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.78.045401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton instability in graphene bilayer systems is studied in the case of a short-ranged Coulomb interaction and a finite voltage difference between the layers. Self-consistent exciton gap equations are derived and solved numerically and analytically under controlled approximation. We obtain that a critical strength of the Coulomb interaction exists for the formation of excitons. The critical strength depends on the amount of voltage difference between the layers and on the interlayer hopping parameter.

引用

页数：9

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