Molecular beam epitaxy of Be-related II-VI compounds

被引：14

作者：

Litz, T

Lugauer, HJ

Fischer, F

Zehnder, U

Lunz, U

Gerhard, T

Ress, H

Waag, A

Landwehr, G

机构：

[1] Physikalisches Inst. Univ. Wurzburg, 97074 Würzburg, Am Hubland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

laser diodes; Be-related II-VI compounds; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(96)01837-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article will give a short overview about some aspects of the molecular beam epitaxy (MBE) of Be-containing II-VI compounds on GaAs substrates. BeTe, BeMgTe, BeMgZnSe, BeZnSeTe, BeZnCdSe layers and ZnSe-BeTe superlattices have been produced. The growth regime and some properties of these new materials will be presented here. (C) 1997 Elsevier Science S.A.

引用

页码：83 / 87

页数：5