Analytical models for transient diffusion and activation of ion-implanted boron during rapid thermal annealing considering ramp-up period

Analyzing experimental boron transient diffusion profiles over a wide temperature range with the process simulator TESIM [1], we evaluated the related transient diffusion time t(E), enhanced diffusivity D-enh, and maximum transient diffusion concentration C-enh. Our extracted values contradict previously reported values, but it is due to the fact that the former works neglected the ramp-up period. We showed that the considering of the ramp-up period is indispensable for the analysis of transient diffusion. We also developed analytical models for t(E), D-enh, and C-enh, and clarified their dependence on physical parameters implemented in TESIM.