RuO2-based thick film resistors studied by extended x-ray absorption spectroscopy

被引：11

作者：

Meneghini, C

Mobilio, S

Pivetti, F

Selmi, I

Prudenziati, M

Morten, B

机构：

[1] ESRF, Ist Nazl Fis Mat, GILDA CRG, F-38000 Grenoble, France

[2] Ist Nazl Fis Nucl, Lab Nazl Frascati, I-00044 Frascati, Italy

[3] Terza Univ Roma, Dipartimento Fis, I-00146 Rome, Italy

[4] Univ Modena, I-41100 Modena, Italy

[5] Ist Nazl Fis Mat, Sez Modena, Modena, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 07期

关键词：

D O I：

10.1063/1.371263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

RuO2-based thick film resistors were studied by extended x-ray absorption fine structure. A bimodal distribution of RuO2 particle size has been determined by comparing the obtained results with x-ray diffraction data. The partial dissolution of RuO2 particles into the glassy matrix is suggested to be one of the principal mechanisms responsible for the electrical conduction in these materials. (C) 1999 American Institute of Physics. [S0021-8979(99)07217-5].

引用

页码：3590 / 3593

页数：4

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