Spontaneous spin coherence in n-GaAs produced by ferromagnetic proximity polarization -: art. no. 121202

被引：72

作者：

Epstein, RJ ^{[1
]}

Malajovich, I ^{[1
]}

Kawakami, RK ^{[1
]}

Chye, Y ^{[1
]}

Hanson, M ^{[1
]}

Petroff, PM ^{[1
]}

Gossard, AC ^{[1
]}

Awschalom, DD ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.65.121202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We find that photoexcited electrons in an n-GaAs epilayer rapidly (<50 ps) spin polarize due to the proximity of an epitaxial ferromagnetic metal. Comparison between MnAs/GaAs and Fe/GaAs structures reveals that this coherent spin polarization is aligned antiparallel and parallel to their magnetizations, respectively. In addition, the GaAs nuclear spins are dynamically polarized with a sign determined by the spontaneous electron-spin orientation. In Fe/GaAs, competition between nuclear hyperfine and applied magnetic fields results in complete quenching of electron-spin precession.

引用

页码：1212021 / 1212024

页数：4

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