Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs

Accurate doping profiles are needed to simulate device characteristics. We use capacitance-voltage curves to interrogate the doping profiles, threshold voltage, body effect, poly depletion and oxide thickness on a range of technology generations down to 0.18 mu m. Proper modeling of both transient enhanced diffusion (TED) and quantum mechanical (QM) effects is essential to ensure the simulations match all aspects of the C-V data. The agreement confirms that the predicted doping profiles are accurate. Device simulations using these doping profiles give the correct threshold voltage, body effect and DIBL characteristics.