Bubble formation due to electrical stress in organic light emitting devices

被引：17

作者：

Ke, L ^{[1
]}

Chua, SJ ^{[1
]}

Zhang, KR ^{[1
]}

Chen, P ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 02期

关键词：

D O I：

10.1063/1.1435064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The degradation in electroluminescence of poly(p-phenylene vinylene)-based organic light-emitting devices is studied using optical microscopy, scanning electron microscopy, and secondary ion mass spectroscopy. "Bubbles" are formed at the polymer and indium tin oxide interface or in the polymer layer within the nonemissive area. This formation, which occurs during device electrical stress, is accompanied by a fluctuation of the device current. The bubbles are formed by the degraded polymer and/or the gas released from disintegration of the polymer. High local current density flowing near the dark spot center and the resultant heating, decomposes the polymer layer. The resultant carbonized area causes either local short circuit and/or open circuit leading to the final light-emitting device failure. (C) 2002 American Institute of Physics.

引用

收藏

页码：171 / 173

页数：3

相关论文

共 16 条

[1] A degradation mechanism of organic light-emitting devices [J].

Aziz, H ;

Xu, G .

SYNTHETIC METALS, 1996, 80 (01) :7-10

[2] Degradation mechanism of small molecule-based organic light-emitting devices [J].

Aziz, H ;

Popovic, ZD ;

Hu, NX ;

Hor, AM ;

Xu, G .

SCIENCE, 1999, 283 (5409) :1900-1902

[3] Humidity-induced crystallization of tris (8-hydroxyquinoline) aluminum layers in organic light-emitting devices [J].

Aziz, H ;

Popovic, Z ;

Xie, S ;

Hor, AM ;

Hu, NX ;

Tripp, C ;

Xu, G .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :756-758

[4] RELIABILITY AND DEGRADATION OF ORGANIC LIGHT-EMITTING DEVICES [J].

BURROWS, PE ;

BULOVIC, V ;

FORREST, SR ;

SAPOCHAK, LS ;

MCCARTY, DM ;

THOMPSON, ME .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :2922-2924

[5] Electromigration of aluminum cathodes in polymer-based electroluminescent devices [J].

Cumpston, BH ;

Jensen, KF .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3941-3943

[6] OBSERVATION OF DEGRADATION PROCESSES OF AL ELECTRODES IN ORGANIC ELECTROLUMINESCENCE DEVICES BY ELECTROLUMINESCENCE MICROSCOPY, ATOMIC FARCE MICROSCOPY, SCANNING ELECTRON-MICROSCOPY, AND ANGER ELECTRON-SPECTROSCOPY [J].

DO, LM ;

HAN, EM ;

NIIDOME, Y ;

FUJIHIRA, M ;

KANNO, T ;

YOSHIDA, S ;

MAEDA, A ;

IKUSHIMA, AJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :5118-5121

[7] Growth of dark spots by interdiffusion across organic layers in organic electroluminescent devices [J].

Fujihira, M ;

Do, LM ;

Koike, A ;

Han, EM .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1787-1789

[8] Device degradation of polymer light emitting diodes studied by electroabsorption measurements [J].

Giebeler, C ;

Whitelegg, SA ;

Lidzey, DG ;

Lane, PA ;

Bradley, DDC .

APPLIED PHYSICS LETTERS, 1999, 75 (14) :2144-2146

[9] Stability and characterization of large area polymer light-emitting diodes over extended periods [J].

Gill, RE ;

van de Weijer, P ;

Liedenbaum, CTH ;

Schoo, HFM ;

Berntsen, A ;

Vleggaar, JJM ;

Visser, RJ .

OPTICAL MATERIALS, 1999, 12 (2-3) :183-187

[10] Metal diffusion from electrodes in organic light-emitting diodes [J].

Lee, ST ;

Gao, ZQ ;

Hung, LS .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1404-1406