Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2

被引：168

作者：

Lahourcade, Lise ^{[1
]}

Coronel, Naomi C. ^{[1
]}

Delaney, Kris T. ^{[2
]}

Shukla, Sujeet K. ^{[3
]}

Spaldin, Nicola A. ^{[4
]}

Atwater, Harry A. ^{[1
,5
]}

机构：

[1] CALTECH, Thomas J Watson Labs Appl Phys, Pasadena, CA 91125 USA

[2] Univ Calif Santa Barbara, Mat Res Lab, Santa Barbara, CA 93106 USA

[3] CALTECH, Inst Quantum Informat & Matter, Pasadena, CA 91125 USA

[4] ETH, CH-8093 Zurich, Switzerland

[5] CALTECH, Kavli Nanosci Inst, Pasadena, CA 91125 USA

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 18期

关键词：

energy materials; materials science; semiconductors; thin films; SINGLE-CRYSTALLINE FILMS; EPITAXIAL-GROWTH; ZNGEN2; ZNSIN2; ZN; EMISSION;

D O I：

10.1002/adma.201204718

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

ZnSnN2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovoltaic absorber material. Results confirm the predicted orthorhombic Pna21 crystal structure in RF sputtered thin films. Additionally, optical measurements reveal a direct bandgap of about 2 eV, which is larger than our calculated bandgap of 1.42 eV due to the Burstein-Moss effect. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2562 / 2566

页数：5

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