Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride

被引:100
作者
Kinoshita, H
Otani, S
Kamiyama, S
Amano, H
Akasaki, I
Suda, J
Matsunami, H
机构
[1] Kyocera Co, Youkaichi Plant, Shiga 5278555, Japan
[2] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[3] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[4] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[5] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 12A期
关键词
GaN; lattice-matched substrate; ZrB2; floating zone; lattice constant; thermal expansion coefficient; thermal conductivity; electrical conductivity;
D O I
10.1143/JJAP.40.L1280
中图分类号
O59 [应用物理学];
学科分类号
摘要
Zirconium diboride (Zi-B-2) has a hexagonal crystal Structure kith an in-plane lattice constant of 3.108A, wry close to that of GaN (3.189 A), It is a metalloid Compound and a verb good electrical conductor, with a resistivity of 4.0 mu Ohm (.)cm. We propose ZrB2 (0001) as an electrically conductive lattice-matched substrate for GaN. Firstly, bulk crystal growth of ZrB2 using a radio frequent (rf)-heated floating zone (FZ) method is presented. Relatively large crystals (phi 10 mm x 60 min) were obtained using this method. The thermal expansion coefficient and thermal conductively of ZrB2 were evaluated using this crystal. Characterization of ZrB2 (0001) mirror-polished substrate as carried out by optical microscopic examination and X-ray diffraction, Finally the results of heteroepitaxial growth are briefly mentioned.
引用
收藏
页码:L1280 / L1282
页数:3
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