Hydrogen role on the properties of amorphous silicon nitride

被引:88
作者
Mota, FD
Justo, JF
Fazzio, A
机构
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[2] UFBa, Inst Fis, BR-40210340 Salvador, BA, Brazil
关键词
D O I
10.1063/1.370977
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed an interatomic potential to investigate structural properties of hydrogenated amorphous silicon nitride. The interatomic potential used the Tersoff functional form to describe the Si-Si, Si-N, Si-H, N-H, and H-H interactions. The fitting parameters for all these interactions were found with a set of ab initio and experimental results of the silicon nitride crystalline phase, and of molecules involving hydrogen. We investigated the structural properties of unhydrogenated and hydrogenated amorphous silicon nitride through Monte Carlo simulations. The results show that depending on the nitrogen content, hydrogen has a different chemical preference to bind to either nitrogen or silicon, which is corroborated by experimental findings. Besides, hydrogen incorporation reduced considerably the concentration of undercoordinated atoms in the material, and consequently the concentration of dangling bonds. (C) 1999 American Institute of Physics. [S0021-8979(99)00616-7].
引用
收藏
页码:1843 / 1847
页数:5
相关论文
共 34 条
[1]  
Allen M. P., 1987, Computer Simulation of Liquids
[2]  
[Anonymous], 1991, HDB CHEM PHYS
[3]   ELECTRON-DIFFRACTION STUDIES OF HYDRIDES SI2H6 AND P2H4 [J].
BEAGLEY, B ;
FREEMAN, JM ;
CONRAD, AR ;
NORTON, BG ;
HOLYWELL, GC ;
MONAGHAN, JJ .
JOURNAL OF MOLECULAR STRUCTURE, 1972, 11 (03) :371-&
[4]   EMPIRICAL POTENTIAL FOR HYDROCARBONS FOR USE IN SIMULATING THE CHEMICAL VAPOR-DEPOSITION OF DIAMOND FILMS [J].
BRENNER, DW .
PHYSICAL REVIEW B, 1990, 42 (15) :9458-9471
[5]   ROLE PLAYED BY N AND N-N IMPURITIES IN TYPE-IV SEMICONDUCTORS [J].
CUNHA, C ;
CANUTO, S ;
FAZZIO, A .
PHYSICAL REVIEW B, 1993, 48 (24) :17806-17810
[6]   Structural properties of amorphous silicon nitride [J].
de Brito Mota, F ;
Justo, JF ;
Fazzio, A .
PHYSICAL REVIEW B, 1998, 58 (13) :8323-8328
[7]   VIBRATIONAL-SPECTRA OF CRYSTALLINE DISILANE AND DISILANE-D6, BARRIER TO INTERNAL-ROTATION AND SOME NORMAL COORDINATE CALCULATIONS ON H3SISIH3, H3SINCO, AND H3SINCS [J].
DURIG, JR ;
CHURCH, JS .
JOURNAL OF CHEMICAL PHYSICS, 1980, 73 (10) :4784-4797
[8]   Extension of the Brenner empirical interatomic potential to C-Si-H systems [J].
Dyson, AJ ;
Smith, PV .
SURFACE SCIENCE, 1996, 355 (1-3) :140-150
[9]   A RAPIDLY CONVERGENT DESCENT METHOD FOR MINIMIZATION [J].
FLETCHER, R ;
POWELL, MJD .
COMPUTER JOURNAL, 1963, 6 (02) :163-&
[10]   POTENTIAL PRIMARY PYROLYSIS PROCESSES FOR DISILANE [J].
GORDON, MS ;
TRUONG, TN ;
BONDERSON, EK .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1986, 108 (07) :1421-1427