Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

被引：8

作者：

Ahopelto, J

Sopanen, M

Lipsanen, H

Lourdudoss, S

Messmer, ER

Hofling, E

Reithmaier, JP

Forchel, A

Petersson, A

Samuelson, L

机构：

[1] HELSINKI UNIV TECHNOL, OPTOELECT LABS, FIN-02150 ESPOO, FINLAND

[2] ROYAL INST TECHNOL, DEPT ELECT, S-16440 KISTA, SWEDEN

[3] UNIV WURZBURG, D-97074 WURZBURG, GERMANY

[4] LUND UNIV, DEPT PHYS, S-22100 LUND, SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

D O I：

10.1063/1.119015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new fabrication process to create InGaAs/InP quantum wires on (100) GaAs substrates is demonstrated. The process is based on the selectivity of the growth of InP on lines created by focused ion beam bombardment, together with the selectivity of the growth of InGaAs on the InP wires. intense photoluminescene is observed from the wires and the emission shows clear polarization parallel and perpendicular to the wires. Cahtodoluminescene images confirm that the luminescence originates from the wires. (C) 1997 American Institute of Physics.

引用

收藏

页码：2828 / 2830

页数：3

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