Influence of Zr/Ti ratios on the deformation in the hysteresis loop of Pb(Zr,Ti)O-3 thin film capacitors

被引：23

作者：

Lee, EG ^{[1
]}

Wouters, DJ ^{[1
]}

Willems, G ^{[1
]}

Maes, HE ^{[1
]}

机构：

[1] IMEC,B-3001 LOUVAIN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 18期

关键词：

D O I：

10.1063/1.118885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric field shift and deformation in the polarization-electric field characteristics of Pb(Zr,Ti)O-3 (PZT) thin film capacitors with various Zr/Ti ratios have been studied as a function of the annealing temperature after patterning the top sputter-deposited Pt electrode using reactive ion etch with Ar gas. A large field shift and a constriction in the hysteresis loops ate observed, particularly in low Zr/Ti PZT films annealed below 400 degrees C. A strong blocking layer effect in unannealed capacitor is found to be related to the internal field caused by trapped charges near electrodes. As the Zr/Ti ratio decreases, the field shift increases and the annealing temperature at which the internal field disappears also increases. (C) 1997 American Institute of Physics.

引用

页码：2404 / 2406

页数：3

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