Capacity limits and matching properties of integrated capacitors

被引：146

作者：

Aparicio, R ^{[1
]}

Hajimiri, A ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 03期

关键词：

analog-digital conversion; calibration; capacitance measurement; capacitors; digital-analog conversion; fractals; integrated circuits; LC tank; passive circuits; resonators; sampled data circuits;

D O I：

10.1109/4.987091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Theoretical limits for the capacitance density of integrated capacitors with combined lateral and vertical field components are derived. These limits are used to investigate the efficiency of various capacitive structures such as lateral flux and quasifractal capacitors. This study leads to two new capacitor structures with high lateral-field efficiencies. These new capacitors demonstrate larger capacities, superior matching properties, tighter tolerances, and higher self-resonance frequencies than the standard horizontal parallel plate and previously reported lateral-field capacitors, while maintaining comparable quality factors. These superior qualities are verified by simulation and experimental results.

引用

页码：384 / 393

页数：10

共 16 条

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